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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1754
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.
+0.10 -0.05
DESCRIPTION
This product is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery applications and power management applications of notebook computers.
FEATURES
* Dual chip type
1.44
* Low on-resistance RDS(on)2 = 53 m MAX. (VGS = 4 V, ID = 3.5 A) * Low input capacitance Ciss = 780 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
1.8 Max.
6.0 0.3 4.4 0.8
RDS(on)1 = 32 m MAX. (VGS = 10 V, ID = 3.5 A)
0.15
0.05 Min.
0.5 0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
Drain
EQUIVALENT CIRCUIT
(1/2 Circuit)
PA1754G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, All terminals are connected.)
Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
2
30 20 7.0 28 1.7 2.0 150 -55 to + 150
V V A A W W C C
Gate
Body Diode
Gate Protection Diode
Source
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature
Notes 1. PW 10 s, Duty cycle 1 % 2. Mounted on ceramic substrate of 2000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G12009EJ1V0DS00 (1st edition) Date Published February 1999 NS CP(K) Printed in Japan
(c)
1997
PA1754
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 3.5 A VGS = 4 V, ID = 3.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.5 A VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 3.5 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 7.0 A VDD = 24 V VGS = 10 V IF = 7.0 A, VGS = 0 IF = 7.0 A, VGS = 0 di/dt = 100 A/s 780 310 110 7 103 103 86 17.9 2.3 4.3 0.80 29 44 1.0 5.0 MIN. TYP. 20 29 1.6 9.4 10 10 MAX. 32 53 2.0 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL
VGS VGS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA PG.
90 % 90 % ID
PG.
RG RG = 10
0 ID
10 %
VGS (on)
90 %
RL VDD
VDD
50
VGS 0 t t = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
2
Data Sheet G12009EJ1V0DS00
PA1754
TYPICAL CHARACTERISTICS (TA = 25 C)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
100
10
1
0.1
0.01 0.001
Mounted on ceramic substrate of 2000mm2 x 1.1mm Single Pulse, 1 unit
10
100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 120 100 80 60 40 20 0 5 10 15 ID=3.5 A Pulsed
|yfs| - Forward Transfer Admittance - S
100
VDS=10V Pulsed
10 TA=-25C 25C 75C 125C
1.0
0.1
1.0
10
100
ID- Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 70 60 50 40 30 20 10 0 1 10 ID - Drain Current - A 100 VGS=4.0V VGS=4.5V VGS=10V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA
1.5
1.0
0.5
0
- 50
0
50
100
150
Tch - Channel Temperature - C
Data Sheet G12009EJ1V0DS00
3
PA1754
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
VGS = 4.5 V 30 VGS = 10 V 20
IF - Diode Forward Current - A
40
VGS = 4 V
100
10 VGS=10V 1 VGS=0V
10 ID= 3.5 A -50 0 50 100 150
0.1 0 0.5 1.0 1.5
0
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
1000 Ciss Coss 100 Crss
100 tf
td(off)
tr 10 td(on)
10 0.1
1.0
10
30
1 0.1
1
10
VDS=15V VGS=10V RG =10 100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
trr - Reverse Recovery Diode - ns
VDS - Drain to Source Voltage - V
30
100
VDD=24 V 15 V 6V
12 VGS 8
20
10
10
4
1 0.1
1
10
100
0
5
10
15
0 20
ID - Drain Current - A
QG - Gate Charge - nC
4
Data Sheet G12009EJ1V0DS00
VGS - Gate to Source Voltage - V
di/dt =100A/ s VGS = 0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 7 A
PA1754
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
PT - Total Power Dissipation - W/package
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 2 unit 1 unit Mounted on ceramic substrate of 2000mm2x1.1mm
dT - Percentage of Rated Power - %
100 80 60 40 20
0
20
40
60
80
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
Mounted on ceramic ) substrate of 0V = 1 ID(pulse) = 28 A 2000mm2 x1.1mm, 1 unit GS (V d PW ite =1 im )L m (on s 10 RDS ID(DC) = 7 A PW =1 0m s PW Po =1 we 00 rD m s iss 1 ip at io n Li m ite d TA = 25 C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS=10 V 20 VGS=4.5 V
ID - Drain Current - A
ID - Drain Current - A
VGS=4 V 10
0.1 Single Pulse 0.1
1
10
100
0
0.2
0.4
0.6
Pulsed 0.8
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
ID - Drain Current - A
10
1
TA=-25C 25C 75C 125C
0.1 VDS = 10 V 4
0
1
2
3
VGS - Gate to Source Voltage - V
Data Sheet G12009EJ1V0DS00
5
PA1754
[MEMO]
6
Data Sheet G12009EJ1V0DS00
PA1754
[MEMO]
Data Sheet G12009EJ1V0DS00
7
PA1754
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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